Infineon IPB35N10S3L-26: High-Performance 100V OptiMOS Power MOSFET

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives the continuous innovation in semiconductor technology. At the forefront of this evolution is Infineon Technologies with its IPB35N10S3L-26, a 100V N-channel power MOSFET that exemplifies the superior performance of the latest OptiMOS™ family. This device is engineered to set new benchmarks in a wide array of applications, from advanced switch-mode power supplies (SMPS) and motor control to synchronous rectification and high-frequency DC-DC converters.

A key highlight of the IPB35N10S3L-26 is its exceptionally low on-state resistance (R DS(on)) of just 2.6 mΩ maximum at 10 V. This ultra-low resistance is paramount for minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. Designers can achieve cooler operation and potentially reduce the size and cost of associated heat sinks, contributing to more compact and lighter end-products.

Furthermore, this MOSFET boasts outstanding switching characteristics, thanks to its low gate charge (Q G) and figure of merit (FOM). The optimized gate charge ensures rapid switching transitions, which is critical for high-frequency operation. This capability allows power supply designers to push switching frequencies higher, enabling the use of smaller passive components like inductors and capacitors, thereby significantly increasing overall power density.

The device is housed in the space-saving D 2PAK (TO-263) package, which offers an excellent balance between thermal performance and board space utilization. Its superior package design ensures robust power handling and effective heat dissipation, making it suitable for high-current applications. The IPB35N10S3L-26 is also characterized by its high ruggedness and reliability, underpinned by Infineon’s quality and expertise in power semiconductors.

ICGOOODFIND: The Infineon IPB35N10S3L-26 stands as a top-tier solution for designers demanding high efficiency and power density. Its combination of ultra-low R DS(on), exceptional switching speed, and a thermally efficient package makes it an ideal choice for modern, high-performance power management systems.

Keywords: Power MOSFET, High Efficiency, Low RDS(on), OptiMOS, Synchronous Rectification.