Infineon IAUC100N04S6N022: A High-Performance OptiMOS 6 Power MOSFET for Automotive and Industrial Applications

The relentless drive for higher efficiency, power density, and reliability in power electronics is a defining challenge for designers in the automotive and industrial sectors. Addressing these demands, Infineon Technologies introduces the IAUC100N04S6N022, a standout member of its advanced OptiMOS™ 6 40 V family. This N-channel power MOSFET is engineered to set a new benchmark for performance in a compact, robust package.

At the heart of this device's superiority is its exceptionally low typical on-state resistance (R DS(on)) of just 0.9 mΩ at a gate-source voltage of 10 V. This ultra-low resistance is a critical factor in minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. For applications like electric power steering (EPS), braking systems, and 48V mild-hybrid DC-DC converters, this efficiency gain is paramount for extending range and improving thermal management.

Beyond its static performance, the IAUC100N04S6N022 excels in dynamic operation. It features outstanding switching characteristics that significantly reduce both turn-on and turn-off losses. This allows for higher switching frequencies, enabling designers to use smaller passive components like inductors and capacitors. The result is a substantial increase in overall power density, a crucial advantage for space-constrained automotive modules and industrial power supplies.

Qualified for the most demanding environments, this MOSFET boasts AEC-Q101 qualification, ensuring it meets the stringent quality and reliability standards required for automotive applications. Its high robustness against static discharge and its ability to handle high inrush currents make it an ideal choice for harsh conditions under the hood. Furthermore, its leadless (CanPAK) package offers superior thermal performance and a very low parasitic inductance, which is essential for managing voltage spikes in fast-switching scenarios. This combination of electrical and thermal prowess also makes it highly suitable for industrial uses such as solar inverters, server power supplies, and motor drives.

ICGOOODFIND Summary: The Infineon IAUC100N04S6N022 is a top-tier OptiMOS™ 6 power MOSFET that delivers an exceptional blend of ultra-low R DS(on), superior switching speed, and high reliability. Its automotive-grade robustness and industry-leading efficiency make it a pivotal component for engineers designing the next generation of high-performance automotive and industrial power systems.

Keywords: OptiMOS™ 6, Low R DS(on), AEC-Q101, Power Density, Automotive Applications.