Infineon BSC065N06LS5ATMA1 OptiMOS Power MOSFET: Datasheet, Pinout, and Application Circuit Design
The Infineon BSC065N06LS5ATMA1 is a benchmark N-channel power MOSFET from Infineon's esteemed OptiMOS™ power transistor family. Engineered for high efficiency and power density in demanding applications, this component is a top choice for designers seeking to optimize performance in compact spaces. This article delves into its key specifications, pinout configuration, and a practical application circuit.
Datasheet Overview and Key Specifications
The datasheet for the BSC065N06LS5ATMA1 reveals its standout characteristics, centered on extremely low losses. Housed in a space-saving PG-TDSON-8 package, it is ideal for modern, miniaturized electronics.
Its most critical specifications include:
Drain-Source Voltage (VDS): 60 V – Suitable for a wide range of standard bus voltages.
Continuous Drain Current (ID): 65 A – High current handling capability in a small footprint.
On-Resistance (RDS(on)): 6.5 mΩ (max) at VGS = 10 V – This exceptionally low resistance is the cornerstone of its efficiency, minimizing conduction losses and heat generation.
Gate Threshold Voltage (VGS(th)): 2.1 V (typ) – Standard logic-level drive, making it compatible with most modern microcontrollers and gate driver ICs.
Total Gate Charge (QG): 18 nC (typ) – Low gate charge allows for very fast switching speeds and reduces driving losses.
Pinout Configuration (PG-TDSON-8 Package)
The PG-TDSON-8 package is an 8-pin Dual Small Outline No-lead (SON) package designed for superior thermal and electrical performance. The pinout is crucial for PCB layout, especially for high-current paths.
Pins 1, 2, 3, 4, 5, 6, 7, 8: These are all connected internally to the Source terminal of the MOSFET. This multi-pin design is critical for minimizing parasitic inductance and providing a low-impedance path for the high source current.
The large central tab: This is the Drain terminal. It is designed to be soldered directly to a large copper area (pour) on the PCB to act as a heatsink, maximizing power dissipation.
Pin 4 (often marked separately): This is the Gate pin. It requires a careful layout to avoid noise coupling and oscillations. A small series resistor should be placed close to this pin to suppress ringing.
Application Circuit Design: A Synchronous Buck Converter
A primary application for the BSC065N06LS5ATMA1 is as the low-side switch in a synchronous buck converter,
a common circuit for generating a lower, regulated DC voltage from a higher input source (e.g., 12V/24V to 5V/3.3V).
Key Design Considerations:
1. Gate Driving: Use a dedicated MOSFET gate driver IC (e.g., Infineon's 1EDN family) to provide the sharp voltage transitions needed to switch the MOSFET quickly. This minimizes time in the linear region and reduces switching losses.
2. PCB Layout: This is paramount for performance.
Power Loop: Keep the high-current path from the input capacitor → high-side MOSFET → inductor → output capacitor → low-side MOSFET (BSC065N06LS5) → back to input capacitor as small and tight as possible to minimize parasitic inductance.
Thermal Management: Solder the MOSFET's drain tab to a large, exposed copper plane on the top layer, connected to internal ground planes through multiple thermal vias. This efficiently pulls heat away from the device.
Gate Trace: Keep the trace from the driver IC to the MOSFET gate short and direct to prevent noise pickup and oscillations.
3. Protection: Incorporate necessary protection features like an over-current sensing circuit (e.g., a shunt resistor in the source path) and a Miller clamp in the driver to prevent parasitic turn-on.
ICGOOODFIND: The Infineon BSC065N06LS5ATMA1 exemplifies the power density achievable with modern MOSFET technology. Its ultra-low RDS(on) and excellent switching characteristics make it an outstanding choice for high-efficiency, high-current power conversion applications like DC-DC converters, motor control, and battery management systems, where thermal performance and board space are critical constraints.
Keywords:
1. Power MOSFET
2. Low RDS(on)
3. Synchronous Buck Converter
4. Thermal Management
5. Gate Driver
