Infineon IRLIZ44NPBF Power MOSFET: Datasheet, Pinout, and Application Circuits
The Infineon IRLIZ44NPBF is a renowned N-channel Power MOSFET that has become a staple in power electronics design. Leveraging Infineon's advanced HEXFET technology, this component is engineered for high efficiency, fast switching, and robust performance in a wide array of applications. Its through-hole TO-220 package makes it suitable for both prototyping and industrial use, offering a compelling blend of power handling and ease of mounting.
Datasheet Overview: Key Specifications
The IRLIZ44NPBF is defined by a set of impressive electrical characteristics that make it highly versatile. It is designed to handle a maximum drain-source voltage (Vds) of 55V and a continuous drain current (Id) of 47A at a case temperature of 25°C. A critically important feature is its exceptionally low on-state resistance (Rds(on)), which is typically just 22.5 mΩ at a gate-source voltage of 10V. This low resistance is the key to its high efficiency, as it minimizes conduction losses and heat generation during operation. The device also features a low threshold voltage (Vgs(th)), making it compatible with both 5V and 3.3V logic-level signals from microcontrollers, which is a significant advantage for modern digital systems.
Pinout Configuration
The pinout for the TO-220 packaged IRLIZ44NPBF is standard and straightforward:
1. Gate (G): This is the control pin. The voltage applied between the Gate and Source pins creates an electric field that allows current to flow between the Drain and Source.
2. Drain (D): This is the input pin connected to the load or the higher voltage side of the circuit.
3. Source (S): This is the output and common return pin, typically connected to ground.
Application Circuits
The IRLIZ44NPBF is incredibly versatile and can be deployed in numerous circuit configurations.
1. Low-Side Switch Circuit: This is one of the most common applications. The MOSFET is placed between the load and ground. The load is connected to the positive supply (Vdd), and the Drain of the MOSFET is connected to the other side of the load. The Source is connected to ground. When a logic-high signal (e.g., 5V from an Arduino) is applied to the Gate, the MOSFET turns on, completing the circuit and allowing current to flow through the load (e.g., a DC motor, solenoid, or high-power LED). A gate resistor (e.g., 10-100Ω) is often used to dampen oscillations and a pull-down resistor (e.g., 10kΩ) ensures the MOSFET turns off reliably when the control signal is floating.
2. PWM Motor Speed Control: By integrating the MOSFET into the low-side switch configuration and driving its Gate with a Pulse Width Modulation (PWM) signal from a microcontroller, the average power delivered to a DC motor can be precisely controlled. This allows for smooth and efficient adjustment of the motor's speed. A flyback diode must be placed across the inductive load (like a motor) to protect the MOSFET from voltage spikes generated when the current is suddenly switched off.
3. Simple SMPS (Switch-Mode Power Supply): The IRLIZ44NPBF's fast switching capabilities make it suitable for use as the main switching element in DC-DC converter topologies, such as a buck or boost converter. In these circuits, it rapidly switches on and off to regulate and convert an input voltage to a desired output voltage with high efficiency.
ICGOODFIND Summary
The Infineon IRLIZ44NPBF stands out as a highly reliable and efficient power switching solution. Its exceptional current handling capability coupled with an extremely low on-state resistance makes it ideal for demanding applications like motor drives, power supplies, and high-current switching modules. Its logic-level compatibility further extends its utility in modern microcontroller-based projects, solidifying its position as a fundamental component for both engineers and electronics enthusiasts.
Keywords:
Power MOSFET, HEXFET Technology, Low On-State Resistance, Logic-Level Gate, PWM Control
