Infineon IPB024N10N5 100V OptiMOS 5 Power MOSFET: Datasheet, Application Circuit, and Features

The Infineon IPB024N10N5 is a state-of-the-art 100V N-channel power MOSFET belonging to the OptiMOS™ 5 technology family. This device is engineered to deliver exceptional efficiency and power density in a wide array of switching applications, from industrial motor drives and power supplies to solar inverters and battery management systems.

Key Features and Benefits

The standout characteristic of the IPB024N10N5 is its extremely low figure-of-merit (R DS(on) × Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 2.4 mΩ at 10 V VGS, it minimizes conduction losses. Simultaneously, its optimized gate charge (Q G) ensures swift switching transitions, which drastically reduces switching losses. This combination is the cornerstone of achieving high efficiency, especially in high-frequency circuits.

Housed in a SuperSO8 package, this MOSFET offers a superior silicon-to-packaging ratio, enhancing thermal performance and power dissipation capabilities. Its low thermal resistance allows the device to operate reliably under high-stress conditions. Furthermore, it boasts high robustness and an avalanche rated design, ensuring durability and longevity in demanding environments.

Application Circuit Example: Synchronous Buck Converter

A primary application for the IPB024N10N5 is as the low-side switch in a synchronous buck converter circuit, a common topology for point-of-load (POL) voltage regulation.

In this circuit:

A high-side MOSFET (which could be another OptiMOS 5 device) and the IPB024N10N5 as the low-side switch are driven by a dedicated MOSFET driver IC.

The driver provides the necessary voltage and current to rapidly charge and discharge the MOSFET gates.

An inductor (L) and output capacitor (C OUT) form the filter network to smooth the switched voltage into a clean DC output.

A PWM controller regulates the duty cycle of the switches to maintain the desired output voltage.

The low R DS(on) of the IPB024N10N5 is critical here, as it minimizes the voltage drop and power loss during the freewheeling phase when it is conducting. Its fast switching speed allows for a higher switching frequency, which in turn enables the use of smaller inductors and capacitors, reducing the overall system size and cost.

Datasheet Overview

The product datasheet is an essential resource for designers. Key parameters to review include:

Electrical Characteristics: Detailed tables for V(BR)DSS, R DS(on) (at various VGS and temperatures), gate threshold voltage, and capacitance values.

Switching Characteristics: Graphs and values for turn-on/off delays and rise/fall times.

Safe Operating Area (SOA): Graphs depicting the current and voltage limits for safe operation.

Thermal Characteristics: Parameters like R thJC and R thJA, crucial for heatsink design.

Package Drawings: Mechanical specifications for PCB layout.

ICGOODFIND: The Infineon IPB024N10N5 OptiMOS 5 MOSFET sets a high bar for performance in its class. Its best-in-class efficiency, driven by an ultra-low R DS(on) and Q G, combined with the excellent thermal performance of the SuperSO8 package, makes it an ideal choice for designers aiming to maximize power density and reliability in their next-generation 100V applications.

Keywords:

1. Power MOSFET

2. Low RDS(on)

3. OptiMOS 5

4. High Efficiency

5. Synchronous Buck Converter