Infineon BFR740L3RH: A 60 GHz Silicon Germanium Low-Noise Amplifier for E-Band Communication Systems

The relentless global demand for higher data rates is pushing wireless communication systems into higher frequency bands. The E-Band spectrum (71–76 GHz, 81–86 GHz) has emerged as a critical enabler for multi-gigabit-per-second links, serving applications in 5G/6G backhaul, fixed wireless access, and high-speed point-to-point communications. Operating successfully in these millimeter-wave (mmWave) frequencies requires highly integrated, high-performance semiconductor technologies. The Infineon BFR740L3RH stands out as a pivotal component in this domain: a monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) engineered to provide exceptional performance in the challenging E-Band environment.

Fabricated using Infineon's advanced Silicon Germanium (SiGe) Carbon (C) B7HF500 process technology, the BFR740L3RH leverages the inherent advantages of SiGe. This technology offers an optimal blend of the high-frequency performance traditionally associated with III-V compounds like Gallium Arsenide (GaAs) and the integration maturity, cost-effectiveness, and high yield of silicon-based processes. The result is a robust and economically viable solution for mass production.

The core function of the BFR740L3RH is to amplify extremely weak signals received at the antenna with minimal degradation of the signal-to-noise ratio (SNR). Its performance specifications are tailored precisely for this task. The amplifier delivers a high gain of over 18 dB across the target frequency band, ensuring that subsequent stages in the receiver chain receive a sufficiently powerful signal for processing. Crucially, it achieves an exceptionally low noise figure (NF) of approximately 3.5 dB. This low NF is paramount, as it directly determines the receiver's sensitivity and its ability to discern faint signals from the inherent electronic noise, ultimately defining the maximum range and reliability of the communication link.

Furthermore, the device exhibits excellent linearity (OIP3 ~ +15 dBm), which is vital for handling strong interfering signals without generating distortion that could corrupt the desired data stream. Its compact 3.0 x 1.1 mm² 6-pin LGA package is designed for surface-mount technology (SMT), facilitating easy integration into high-density mmWave module designs, such as radio transceivers and phased-array antennas.

In practical terms, integrating the BFR740L3RH into an E-Band radio module significantly enhances the performance of the entire receiver front-end. Its high gain and low noise characteristics allow system designers to either extend the communication range of a link or reduce the required output power of the transmitter, contributing to more efficient and lower-power systems.

ICGOODFIND: The Infineon BFR740L3RH is a benchmark SiGe LNA that effectively bridges the performance-cost gap in E-Band systems. Its superior low-noise figure, high gain, and robust integration capabilities make it an indispensable component for designers building next-generation, high-capacity wireless communication infrastructure.

Keywords: Low-Noise Amplifier (LNA), E-Band, Silicon Germanium (SiGe), Millimeter-wave (mmWave), 5G Backhaul.